cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 1/7 btb1198k3 cystek product specification pnp epitaxial planar transistor btb1198k3 features ? low v ce(sat) , v ce(sat) = -0.16v (typ.) @ i c /i b =-500ma/-50ma ? high breakdown voltage, bv ceo =-100v ? complementary to btd1768k3 ? pb-free lead plating and halogen-free package symbol outline btb1198k3 to-92l b base c collector e emitter ordering information device package shipping to-92l 2000 pcs / tape & box btb1198k3-x-tb-g (pb-free lead plating and halogen-free package) to-92l BTB1198K3-X-BM-G (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 2/7 btb1198k3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current (dc) i c -1 a collector current (pulse) i cp -2 (note) a power dissipation p d 900 mw thermal resistance, junction to ambient r ja 139 c/w junction temperature tj 150 c storage temperature tstg -55~+150 c note : pulse test, p w 10ms, duty 50%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -120 - - v i c =-50 a bv ceo -100 - - v i c =-1ma bv ebo -5 - - v i e =-50 a i cbo - - -100 na v cb =-100v i ebo - - -100 na v eb =-4v *v ce(sat) - -0.16 -0.5 v i c =-500ma, i b =-50ma *v ce(sat) - -0.3 -0.5 v i c =-1a, i b =-100ma *v be(sat) - - -1.2 v i c =-1a, i b =-50ma *v be(on) - - -0.75 v v ce =-5v, i c =-5ma *h fe 120 - 560 - v ce =-5v, i c =-200ma f t - 200 - mhz v ce =-10v, i c =-50ma, f=100mhz cob - 11 - pf v cb =-10v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% classification of h fe rank q r s range 120~270 180~390 270~560
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 3/7 btb1198k3 cystek product specification typical characteristics output characteristics 0 0.05 0.1 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=100ua ib=200ua ib=300ua ib=400ua ib=500ua output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=500ua ib=1ma ib=1.5ma ib=2ma ib=2.5ma output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=2ma ib=4ma ib=6ma ib=8ma ib=10ma output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=5ma ib = 10m a ib=15ma ib = 20m a ib = 25m a current gain vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vc e = 3v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=10ib ic=20ib ic=25ib vce(sat)
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 4/7 btb1198k3 cystek product specification typical characteristics (cont.) saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=10ib power derating curve 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw) cutoff frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) cutoff frequency---ft(mhz) vce=10v capacitance characteristics 1 10 100 11 0 reverse-biased collector base voltage---vcb(v) collector output capacitance--- cob(pf) 1 0 0 safe operating area 0.001 0.01 0.1 1 10 1 10 100 1000 forward voltage---vce(v) forward current---ic(a) pt=1ms pt=100ms pt=1s
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 5/7 btb1198k3 cystek product specification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.40 0.50 d1 lead wire diameter 1 0.62 0.78 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component fr om tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 6/7 btb1198k3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c824k3 issued date : 2008.10.31 revised date :2013.10.09 page no. : 7/7 btb1198k3 cystek product specification to-92l dimension *: typical inches millimeters inches millimeters dim min. max. min. max. b1 198 marking: s t yle: pin 1.emitter 2.colle ctor 3.ba se 3-l ead t o -9 2l plasti c pa ckage cys t ek pa ck a g e code: k3 product name date code: y ear+month y ear: 7 2007, 8 20 08 9 9, a 10, b 11 , c 12 month: 1 1, 2 2, ??? , dim m i n . m a x . m i n . m a x . a 0 . 1 4 6 0 . 1 6 1 3 . 7 0 0 4 . 1 0 0 e 0 . 3 0 7 0 . 3 2 3 7 . 8 0 0 8 . 2 0 0 a 1 0 . 0 5 0 0 . 0 6 2 1 . 2 8 0 1 . 5 8 0 e * 0 . 0 5 * 1 . 2 7 0 b 0 . 0 1 4 0 . 0 2 2 0 . 3 5 0 0 . 5 5 0 e 1 0 . 0 9 6 0 . 1 0 4 2 . 4 4 0 2 . 6 4 0 b 1 0 . 0 2 4 0 . 0 3 1 0 . 6 0 0 0 . 8 0 0 l 0 . 5 4 3 0 . 5 5 9 1 3 . 8 0 0 1 4 . 2 0 0 c 0 . 0 1 4 0 . 0 1 8 0 . 3 5 0 0 . 4 5 0 ? - 0 . 0 6 3 - 1 . 6 0 0 d 0 . 1 8 5 0 . 2 0 1 4 . 7 0 0 5 . 1 0 0 h 0 . 0 0 0 0 . 0 1 2 0 . 0 0 0 0 . 3 0 0 d 1 0 . 1 5 7 - 4 . 0 0 0 - note s: 1.controlling dimension: millimeter s. 2.maximum lead thickness include s lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is an y q uestion w i th p a ck ing specification or p a cking metho d , please c ont act y our local c y s t ek sales of fice. material: ? lead: kf c ; pu re tin plated ? mold compou n d : epoxy resin fa mily , flammabilit y solid burning cla ss: ul94v -0 im portan t n o tice : ? all rights are re served. reprod u c tion in w hole or in part is prohibited w i thout the p r ior w r itten a pprov al of c y stek. ? c y stek reserv es the right to m a ke changes to its products w i tho u t notice. ? cy st e k semic ond uct o r pr odu cts are n o t warr ante d t o be s u it able f o r use i n l i fe-su p p o rt a p p licatio ns, or sys tems. ? c y stek assumes no liability fo r an y consequenc e of customer pr oduct design, infringement of pat e n ts, or application assistance .
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